As the dimensions of modern integrated circuits continue to shrink, device fabrication and parametric testing have become more challenging. Every device shrink, process innovation, and new material makes the volume and repeatability of parametric test data more critical in process development and the control of modern fabs. Today's fabs must understand how to produce and characterize advanced materials such as high-K gate dielectrics and low-K insulators used in conductive layers – quickly and cost-effectively. Tomorrow's IC producers may need to manufacture and test transistors formed from carbon nanotubes or other technologies that researchers have just begun to explore.
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