Nanotechnology At TU Ilmenau Boosted By AIXTRON Dual Reactor
The wide bandgap III-nitrides for example GaN and AlN have interesting physical properties such as high chemical stability and high piezoelectric as well as pyroelectric polarization. Besides applications in lighting, or in CD and DVD reading and writing systems, Nitrides are rapidly moving into new applications like biosensors and are also under serious investigation as powerful, environmentally attractive high-frequency electronic devices. Lately the quality of epitaxial layers could be considerably improved by using SiC/Si as well as ZnO substrates.
AlN, ZnO and InOxNy self organized nanostructures are of special interest in applications like gas detectors, LED and Laser in blue and ultraviolet spectral region, UV detectors for solar blind applications, high-frequency components, high performance and high temperature electronic as well as wireless communication systems.
Within the framework of this project AIXTRON and the TU Ilmenau concluded a cooperation agreement focusing on AlGaN/GaN research. In connection with this contract TU Ilmenau will establish a demonstration laboratory on site.
Prof. Oliver Ambacher, Faculty of Electrical Engineering and Information Technology, TU Ilmenau comments: "We are pleased to intensify our research on GaN, ZnO and InOxNy with the two new AIXTRON reactors. The unique design of this dual reactor system allows the students and researchers to work in parallel on both material systems. This flexibility plus the well-known safety standard of the AIXTRON systems are key factors for a modern university and research institute."
Dr. Bernd Schulte, Executive Vice President, Compound Semiconductor TechnologieS adds: "To further expand our network of knowledge it is very important for us, to keep up with the latest developments and provide state-of-the-art equipment. We are pleased to enter into a new cooperation with the renowned Technical University of Ilmenau."
SOURCE: AIXTRON