Video | June 8, 2011
Live From IMS2011: NTT-AT Highlights GaN Epitaxial Wafers For HEMT Devices
In this video, Takashi Kobayashi, executive engineer for NTT Advanced Technology's Nano-Technology Business Unit, discusses the company's GaN (gallium nitride) materials for high electron mobility transistors (HEMTs). NTT-AT uses four different substrates for its GaN epitaxial wafers — sapphire, Si (silicon), SiC (silicon carbide), and GaN — and can provide substrates in large sizes (up to 6 inches with Si and sapphire). Kobayashi also explains some of the novel techniques NTT-AT uses to fabricate these GaN wafers.