Kulicke & Soffa Industries, Inc. (“Kulicke & Soffa”, “K&S” or the “Company”), a global leader in the design and manufacture of semiconductor, LED and electronic assembly equipment, today announced the launch of its IConnPS MEM TMPLUSHigh Performance Wire Bonder series
Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit.
Rudolph Technologies, Inc. announced recently that a leading outsourced assembly and test facility (OSAT) has placed an order for the JetStep® Lithography System for the semiconductor advanced packaging industry’s first panel manufacturing line
Stanford University researchers sponsored by Semiconductor Research Corporation (SRC), the world’s leading university-research consortium for semiconductor technologies, have developed a new area selective atomic layer deposition (ALD) process that promises to accelerate the manufacturing of higher performing, more energy efficient semiconductors
EpiGaN, the leading European supplier of commercial grade 6- and 8-inch GaN-on-Silicon epi-wafers for 600-V HEMT (High Electron Mobility Transistor) power semiconductors, and SunEdison Semiconductor, a leading manufacturer of silicon substrates for semiconductor manufacturing, have signed a global representation agreement for EpiGaN's GaN-on-Si epi wafers.
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